摘要
对2 in InSb(111)晶片材料位错密度、X光形貌、X射线双晶衍射半峰宽和电学参数进行了整片均匀性测试表征。结果表明材料整体性能极佳,并结合InSb晶体生长原理对晶片材料位错密度、掺杂浓度区域性分布进行了深层机理分析。
The uniformity of 2＇ InSb with Dislocation density, X-ray morphology, FWHM and Electronic parameter wafer are characterized. Results indicate the property of InSb crystal material is excellent, and area distribution mechanism of lnSb wafer with dislocation density and doping concentration are analyzed according to the growth principle.
出处
《激光与红外》
CAS
CSCD
北大核心
2013年第10期1146-1148,共3页
Laser & Infrared
关键词
InSb晶片材料
性能表征
区域分布
机理分析
InSb wafer material
property characterization
area distribution
mechanism analysis
