摘要
利用等离子体增强化学气相沉积系统(PECVD)研究SiO2薄膜低温制备工艺,分析工艺条件对薄膜性能参数影响,通过调节射频功率优化薄膜应力,在150℃低温下获得接近零应力SiO2薄膜,薄膜沉积速率约为40 nm/min,片内均匀性优于3%,折射率为1.46±0.003,并具有良好的附着力和抗蚀性能。由于沉积温度低,薄膜性能好,因此可以作为绝缘层或介质层,应用于柔性电子领域。
The preparation of SiO2 film by plasma enhanced chemical vapor deposition （PECVD） was invertigated. The effect of deposition parameters on the properties of the film was analyzed. The stress of the fihn by adjusing the RF power was optimized, Near-zero stress SiO2 film was prepared at 150℃. The deposition rate is around 40 tory/rain with thickness uniformity better than 3% and refractive index in the range of 1.46±0. 003. The film had good adhesion and etching resistance. Due to its low temperature and excellent film properties, the film can be applies in flexible electronics as insulation or dielectric layers.
出处
《真空与低温》
2013年第3期168-171,共4页
Vacuum and Cryogenics
