用于MFIS的ZrO_2薄膜的制备及特性研究

Study on the Fabrication and Performance of ZrO_2 Thin Film for MFIS FET

新型不挥发非破坏性读出铁电存储器金属 /铁电 /半导体器件结构中 ,存在着铁电薄膜与半导体衬底之间相互扩散、离子陷阱密度高、铁电薄膜难于直接淀积在硅衬底上、电荷注入等问题 ,因此在铁电薄膜与半导体之间增加一层合适的介质材料作为阻挡层是制备不挥发非破坏性读出铁电存储器的关键。文中研究了运用 SOL- GEL方法制备 Zr O2 介质层的方法 ,并且对制备的介质层的成份、结构、电特性进行了分析 ,为研制 MFIS作了准备。

In the structure of the new type of nonvolatile non destructive readout ferroelectric memory, such problems as mutual diffusion between ferroelectric film and semiconductor substrate, high trap density, charge injection etc. exist. Thus, the key of fabricating the non destructive ferroelectric memory is to grow a buffer dielectric layer between ferroelectric film and semiconductor. In this paper, the SOL GEL method for growing ZrO 2 film is studied. The composition, structure and electric features of Zirconium Oxide are analyzed. These are all the preparation work for studying MFIS FET.