PMOS剂量计的稳定性研究

A Study of Stability on Threshold Voltage of PMOS Dosimeters

在室温条件下 ,研究了辐照偏置、总剂量和剂量率对 PMOS剂量计辐照剂量记录 -阈电压的稳定性影响 ,观察了辐照后阈电压在不同栅偏条件下的变化趋势和幅度。分析认为慢界面陷阱中电荷的“充放电”是造成不稳定的首要原因。结果表明 ,该种由慢界面态造成的阈电压变化在每次开机测量下具有重复性。讨论了在 PMOS剂量计中提高稳定性的办法。

The influence of total dose,irradiation dose rate and gate biased voltage on the stability of radiation dose recording threshold voltage of PMOS dosimeters have been studied at room temperature.The threshold voltage drift trends and amplitude have been observed at different biased condition on gate source.The “charging and discharging” of slow interface traps is considered as the first reason to bring about instability.The experimental results show that this instable drift of threshold voltage induced by slow interface states is repeatable at each power on measurement.A method is discussed to improve stability of PMOS dosimeters.