基于物理分析的大信号HBT模型

A Physics-Based HBT Model for Large-Signal Application

:本文利用物理参数提取大信号HBT模型。首先 ,推导并提出器件的模型 ,对模型中各参数含义作了分析和阐述 ,将模型分为本征模型和外模型。本模型利用二级管来模拟复合效应 ,同时还考虑器件的热效应。其次 ,采用SPICE模拟器件的IC -Vce特性曲线并和参考文献中的特性曲线作分析对比。

The article extracts a large-signal HBT model by means of physical parameters.At first,we have turned out and deduced the model,detailed and analysed its parameters.The model can be devided into two parts:intrinsic modle and extrinsic mode.In order to simulate recombination effects,we use a diode.In addition to it,thermal effects can be invoved.Secondly,we have simulated IC-Vce characterisitc using SPICE and compared them with those of references.