F-P半导体激光放大器弱信号机制下的增益特性研究

STUDY ON GAIN CHARACTERISTIC OF FABRY-PEROT TYPE SEMICONDUCTOR LASER AMPLIFIER UNDER WEAK SIGNAL REGIME

利用直接耦合的激光器放大器对,观察了弱信号机制下Fabry-Perot的半导体激光放大器的光放大.测量了放大器增益随放大器注入电流的变化关系,并将实验结果同理论模型相比较,发现理论和实验是一致的.把F-P放大器看作是一个光电探测器,通过测量放大器的短路光电流,得到了激光器同放大器之间的耦合效率.

Amplification in Fabry-Perot type semiconductor laser amplifiers has been observed with a directly coupled laser-amplifier pair. Amplifier gain as a function of amplifier injection current was measured and compared with theoretical models. Regarding F-P type semiconductor laser amplifier as a photodiode, the optical coupling efficiency between amplifier and laser can be measured by the short photocurrent of laser amplifier.