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MEH-PPV/Alq_3-based bulk heterojunction photodetector 被引量:1

MEH-PPV/Alq_3-based bulk heterojunction photodetector
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摘要 In this paper, we present the effect of varied illumination levels on the electrical properties of the organic blend bulk heterojuction (BHJ) photodiode. To prepare the BHJ blend, poly(2-methoxy-5(2P-ethylhexyloxy) phenyleneviny- lene (MEH-PPV) and aluminum-tris-(8-hydroxyquinoline) (Alq3) are used as donor and acceptor materials, respectively. In order to fabricate the photodiode, a 40-nm thick film of poly(3, 4-ethylendioxytbiophene):poly(styrensulfonate) (PE- DOT:PSS) is primarily deposited on a cleaned ITO coated glass substrate by spin coating technique. The organic photo- sensitive blend is later spun coated on the PEDOT:PSS layer, followed by the lithium fluoride (LiF) and aluminium (A1) thin films deposition by thermal evaporation. The optical properties of the MEH-PPV:Alq3 blend thin films are investigated using photoluminescence (PL) and UV-Vis spectroscopy. The photodiode shows good photo-current response as a function of variable illumination levels. The responsivity value - 8 mA/W at 3 V is found and the ratio of photo-current to dark current (lph/IDark) is found to be 1.24. In this paper, we present the effect of varied illumination levels on the electrical properties of the organic blend bulk heterojuction (BHJ) photodiode. To prepare the BHJ blend, poly(2-methoxy-5(2P-ethylhexyloxy) phenyleneviny- lene (MEH-PPV) and aluminum-tris-(8-hydroxyquinoline) (Alq3) are used as donor and acceptor materials, respectively. In order to fabricate the photodiode, a 40-nm thick film of poly(3, 4-ethylendioxytbiophene):poly(styrensulfonate) (PE- DOT:PSS) is primarily deposited on a cleaned ITO coated glass substrate by spin coating technique. The organic photo- sensitive blend is later spun coated on the PEDOT:PSS layer, followed by the lithium fluoride (LiF) and aluminium (A1) thin films deposition by thermal evaporation. The optical properties of the MEH-PPV:Alq3 blend thin films are investigated using photoluminescence (PL) and UV-Vis spectroscopy. The photodiode shows good photo-current response as a function of variable illumination levels. The responsivity value - 8 mA/W at 3 V is found and the ratio of photo-current to dark current (lph/IDark) is found to be 1.24.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第10期192-196,共5页 中国物理B(英文版)
基金 Project supported by the Long Term Research Grant Scheme(LRGS),Ministry of Higher Education,Malaysia(Grant No.LR003/2011A)
关键词 MEH-PPV ALQ3 bulk heterojunction PHOTODIODE MEH-PPV, Alq3, bulk heterojunction, photodiode
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