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Optical and magnetic properties of InFeP layers prepared by Fe^+ implantation

Optical and magnetic properties of InFeP layers prepared by Fe^+ implantation
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摘要 InFeP layers are prepared by ion implantation of InP with 100-keV Fe+ ions to a dose of 5 ×10^16 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3+ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 0e (10e = 79.5775 A-m-1), saturation magnetization of 4.35 × 10-5 emu, and remnant magnetization of 4.4× 10 6 emu. InFeP layers are prepared by ion implantation of InP with 100-keV Fe+ ions to a dose of 5 ×10^16 cm-2 and investigated by optical, magnetic, and ion beam analysis measurements. Photoluminescence measurements show a deep-level peak at 1.035 eV due to Fe in InP and two exciton-related luminescences at 1.426 eV and 1.376 eV in the implanted samples annealed at 400℃. Conversion electron Mossbauer spectroscopy reveals a doublet corresponding to Fe3+ ions in the indium sites. Atomic force microscopy and magnetic force microscopy show that magnetic clusters are formed in the annealing process. The magnetization-field hysteresis loops show ferromagnetic properties persisting up to room temperature with a coercive field of 100 0e (10e = 79.5775 A-m-1), saturation magnetization of 4.35 × 10-5 emu, and remnant magnetization of 4.4× 10 6 emu.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第10期397-400,共4页 中国物理B(英文版)
基金 Project supported by the International Cooperation Program of the Ministry of Science and Technology,China(Grant No.2011DFR50580) the Fundamental Research Funds for the Central Universities,China(Grant No.20102020101000022)
关键词 ion implantation diluted magnetic semiconductor PHOTOLUMINESCENCE Rutherford backscatter-ing/channeling ion implantation, diluted magnetic semiconductor, photoluminescence, Rutherford backscatter-ing/channeling
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