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Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiN_x multilayers 被引量:2

Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiN_x multilayers
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摘要 Nanocrystalline Ge (nc-Ge) single layers and nc-Ge/SiNx multilayers are prepared by laser annealing amorphous Ge (a-Ge) films and a-Ge/SiNx multilayers. The microstructures as well as the electrical properties of laser-crystallized samples are systematically studied by using various techniques. It is found that the optical band gap of nc-Ge film is reduced compared with its amorphous counterpart. The formed nc-Ge film is of p-type, and the dark conductivity is enhanced by 6 orders for an nc-Ge single layer and 4 orders for a multilayer. It is suggested that the carrier transport mechanism is dominant by the thermally activation process via the nanocrystal, which is different from the thermally annealed nc-Ge sample at an intermediate temperature. The carrier mobility of nc-Ge film can reach as high as about 39.4 cm2.V ^-1 .s^-1, which indicates their potential applications in future nano-devices. Nanocrystalline Ge (nc-Ge) single layers and nc-Ge/SiNx multilayers are prepared by laser annealing amorphous Ge (a-Ge) films and a-Ge/SiNx multilayers. The microstructures as well as the electrical properties of laser-crystallized samples are systematically studied by using various techniques. It is found that the optical band gap of nc-Ge film is reduced compared with its amorphous counterpart. The formed nc-Ge film is of p-type, and the dark conductivity is enhanced by 6 orders for an nc-Ge single layer and 4 orders for a multilayer. It is suggested that the carrier transport mechanism is dominant by the thermally activation process via the nanocrystal, which is different from the thermally annealed nc-Ge sample at an intermediate temperature. The carrier mobility of nc-Ge film can reach as high as about 39.4 cm2.V ^-1 .s^-1, which indicates their potential applications in future nano-devices.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第10期486-492,共7页 中国物理B(英文版)
基金 Project supported by the National Basic Research Program of China (Grant No.2013CB632101) the National Natural Science Foundation of China (Grant Nos.11274155 and 61036001) Priority Academic Program Development of Jiangsu Higher Education Institutions,Jiangsu Province,China
关键词 nanocrystalline Ge MICROSTRUCTURE carrier transport MOBILITY nanocrystalline Ge, microstructure, carrier transport, mobility
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  • 1Poncet A, Souifi A, Baron T and Gautier E 2006 Solid State Electron. 501310.
  • 2Tawancy H 2011 Scr. Mater. 65863.
  • 3Huang W, Liu J, Cai C, Lu Q, Liu Sand Qin C 2010 Chin. Phys. B. 19 097801.
  • 4Ortiz M, Rodriguez A, Sangrador J, Rodriguez T, Avella M, Jimenez J and Ballesteros C 2005 Nanotechnology 16 S197.
  • 5Xu H, Chan Y and Su L 2011 Chin. Phys. B 21 107801.
  • 6Singha R, Manna S, Das S, Dhar A and Ray S 2010 Appl. Phys. Lett. 96233113.
  • 7Mitsui M, Arimoto K, Yamanaka J, Nakagawa K, Sawano K and Shi?raki Y 2006 Appl. Phys. Lett. 89 192102.
  • 8Kuo P, Chao T, Huang J and Lei T 2009 IEEE Electron Dev. Lett. 30 234.
  • 9Li C, Xu J, Li W, Sun S, Jiang X and Chen K 2012 J. Vac. Sci. Technol. B30051201.
  • 10Khan A, Mehmood M, Rana A and Muhammad T 2010 Appl. Surf Sci. 2562031.

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