摘要
通过平面波展开法计算了以正方点阵排列的二维各向异性声子晶体(AlAs/GaAs)的带隙结构,得到频散曲线和带隙宽度随材料参数变化关系。计算结果表明基体和散射体材料参数有较大差别时,面内模态的能带结构中没有明显的完全带隙,但有方向带隙的存在,其中的ρa/ρb对面内带隙的影响较大,C44a/C44b和C11a/C11b对面内带隙影响较小;而面外模态的能带结构中存在明显的完全带隙,其中C44a/C44b对面外带隙起决定作用,ρa/ρb值略有影响。
In this paper, the plane wave expansion （PWE）method is applied to calculate the band structures of the two-dimensional orthorhombic phononic crystals with square lattice, and the relations between the band structures or the width of band gaps and the material parameters are investigated. The results show that no complete band gaps but directional band gaps exhibit in the in-plane band structures when there is much difference of material parameters between the matrix and scatterer. And it is shown that the Pa/Pb has more significantly affect than the C44a/C44b or C11a/C11b on the in-plane band structures. In addition, there are complete band gaps appearing in the out-plane band structures. The case exhibits that the C44a/C44b has more apparent affect than the Pa/Pb on the out-plane band structures.
出处
《太原科技大学学报》
2013年第5期378-387,共10页
Journal of Taiyuan University of Science and Technology
基金
太原科技大学博士科研基金(20112012)
关键词
声子晶体
能带结构
带隙
平面波展开法
材料参数
phononic srystals, band structure, band gaps, plane wave expansion, material parameters
