铜掺杂碳膜的蒙特卡罗模拟及其电学特性的计算(英文)

A Simulation Study of the Depositing Process and Electrical Properties of Copper-doped Carbon Film

采用蒙特卡罗的方法模拟了铜掺杂碳膜的淀积过程。首先建立空间网格结构，通过在网格结构上随机降落原子来模拟薄膜的淀积过程。薄膜的电学特性通过解泊松方程来计算。仿真结果表明，薄膜表面的粗糙程度随着碳含量的上升而下降；含碳量为20％～25％的薄膜电阻很低而含碳量在60％～75％的薄膜电阻则很高。仿真结果与现有实验结果高度吻合，保证了仿真的正确性。

The depositing process of copper-doped carbon （CuC） film is simulated using Monte Carlo method. The CuC film is modeled by a space grid structure. The depositing process of CuC is simulated by randomly distributing on a spatial grid structure. The electrical properties are calculated by solving Pois- sonrs equation. Results indicate that the surface roughness decreases progressively as the carbon content in the films increases, and that the electrical resistivity of CuC films containing 20%~25% of carbon is very low whereas the resistivity value can be very high with 60%~75% of carbon content. All the simulations are compared with experimentally measured data, and the good agreement between them validates the ac- curacy of the simulations.