一种基于LDMOS器件的小型化P波段功率放大模块

A Miniaturized P-band Power Amplifier Based on LDMOS Device

设计了一种基于LDMOS器件的功率放大模块。该模块采用高增益的SiGe HBT单片、高压LDMOS单片和大功率LDMOS器件的多级级联形式,实现长脉宽(15ms)、高占空比(33%)、高增益(48dB)以及大功率(200W)的设计要求;同时,该模块采用独特的两腔体一体化结构设计,使整个模块的体积和重量缩小为相同性能水平产品的五分之一到十分之一。

This article designs a power amplifier（PA） module based on LDMOS device. The module with multi-stage cascade form is composed of a high-gain SiGe HBT monolithic, high-volt LDMOS single-chip and high-power LDMOS devices. It meets the design requirements such as wide pulse（15 ms）, high duty cycle（33%）, high gain （48 dB） and high power（200 W）. The de- signed module has a special two cavity integrated structure, its volume and weight is decreased by 80 percent to 90 percent compared with the same level products.