摘要
研究了不同栅结构对栅接地SOI NMOS器件ESD(Electrostatic discharge,静电放电)特性的影响,结果发现环源结构的SOI NMOS器件抗ESD能力最强,而环栅结构的器件抗ESD能力最弱,其原因可能与器件有缘区面积和电流分布有关。
The ESD characteri is studied. It is indicated th (GAS) structure and is the at the stic of gate grounded NMOSFET with different gate structures ability of ESD hardness is the strongest in gate around source weakest in bly related to interested areas and curr enclosed gate structure in SOI NMOSFET. This is proba- ent density.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2013年第5期501-504,共4页
Research & Progress of SSE
基金
国家预研项目资助项目(51308040403)