高压BiCMOS工艺及其在驱动芯片设计上的应用

Application of High Voltage BiCMOS Process in Driver IC Design

随着高压BiCMOS技术越来越多地应用于驱动等集成电路芯片设计中,所存在的问题也越来越突出。如何使一个具有竞争力的高压BiCMOS工艺能在设计中得到灵活方便的使用将成为一个新的课题。与通常的CMOS器件不同的是,高压器件在工艺和版图上有特定的考量,是否能形成灵活可调的PDK对一款成功的设计而言至关重要。其次,更丰富、性能更优良的器件可以进一步提升设计的竞争力,这需要工艺端提供更多的创新。另外,晶圆厂和设计的紧密合作也很重要,通过量身定做的方式可以帮助高压工艺走出现有的驱动芯片设计需求瓶颈。

As high voltage BiCMOS process problems become increasingly outstanding. The has been more frequently selected in driver 1C design, requirement of process flexibility and convenience during the design course becomes a new subject. Comparing with normal CMOS device, high voltage transistor is different with special consideration on both process and layout node. Flexibility and adjustability of PDK are key aspects for a successful design. And meanwhile, more devices with better performance can provide competitive options for design house which need innovation on process. In addition, the cooperation between FAB and design house can help to break through the bottle-neck of high voltage process application in driver IC design.