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高效率晶体硅太阳电池研究及产业化进展 被引量:10

Progress in R&D and Mass Production of High Efficiency Crystalline Silicon Solar Cells
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摘要 高效率晶体硅太阳电池研究及产业化已成为世界各国光伏技术研究的重点和大力发展的战略性新兴产业。2012年晶体硅太阳电池占全球光伏市场约90%的份额,已经成为光伏行业的主流技术,单晶硅太阳电池实验室最高效率已经达到25%,其技术研发水平和规模化生产能力直接决定着光伏发电平价上网的速度。论述了太阳电池效率的损失机制和提高太阳电池效率方法,介绍了目前实验室效率最高的三种晶体硅太阳电池的结构、特性及效率提升历史,综述了中国产业化高效率低成本晶体硅太阳电池技术的现状,未来高效率晶体硅电池产业化技术将向着使用n型硅衬底、低成本和薄片化方向发展。 R&D and mass production of high efficiency crystalline silicon solar cells have been supported and developed in the world as an important photovohaic (PV) research area and a new strategic industry. Crystalline silicon solar cells with about 90% market share in 2012 have become the mainstream technology in PV industry. The solar cell efficiency of mono-crystal silicon in the laboratory has reached 25%. The speed of grid parity by photovohaic power depends strongly on the technical breakthrough of the efficiency of crystalline silicon solar cells in R&D and mass production. The efficiency loss mechanism and the techniques to improve the efficiency for solar cell are presented. The structure, property and history of efficiency improvement of three crystalline Si solar cells with the record efficiency in laboratory are discussed. Status of high efficiency and low cost crystalline silicon solar cells in mass production level is reviewed. The future trends in mass production of high efficiency crystalline silicon will be lower cost, thin silicon wafer and using n-type silicon wafers.
出处 《半导体技术》 CAS CSCD 北大核心 2013年第11期801-806,811,共7页 Semiconductor Technology
基金 国家高技术研究发展计划(863计划)资助项目(2012AA050304)
关键词 光伏 太阳电池 晶体硅 背接触 异质结 photovoltaic solar cell crystalline silicon back contact heterojunction
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参考文献20

  • 1太阳能发电科技发展“十二五”专项规划.中华人民共和国科学技术部[EB/OL].http://www.most.gov.cn/fggw/zfwj/zfwj2012/201204/t20120424_93887.htm.
  • 2CHAPIN D M, FULLER C S, PEARSON G L. A new silicon p-n junction photocell for converting solar radiation into electrical power [ J]. Journal of Applied Physics, 1954, 25 (5): 676-677.
  • 3GREEN M A, EMERY K, HISHIKAWA Y, et al. Solar cell efficiency tables (version 39 ) [J]. Prog Photovolt: Res Appl, 2012, 20 (1): 12 -20.
  • 4中国光伏产业联盟,2012-2013年中国光伏产业年度报告[M].北京:中国电子信息产业研究院,2013:91-126.
  • 5刘涛,谯锴.从半导体产业的起伏看中国光伏产业的机遇与挑战[J].光伏制造,2013,4(1):40-42.
  • 6SCHULTZ O, QUEISSER H J. Detailed balance limit of efficiency of p-n junction solar cell [J]. Journal of Applied Physics, 1961, 32 (3): 510-519.
  • 7CHO E C, GREEN M A, CONIBEER C, et al. Silicon quantum dots in a dielectric matrix for all-silicon tandem solar cells [J]. Advances in Opto Electronics, 2007: 69578.
  • 8KONIGA D, CASALENUOVOA K, TAKEDAC Y, et al. Hot carrier solar cells: principles, materials and design [J]. Physica: E, 2010, 42 (10): 2862-2866.
  • 9CHO E, PARK S, HAO X, et al. Silicon quantum dot/crystalline silicon solar cells [J]. Nanotechnology, 2008, 19 (24): 245201.
  • 10ABERLE A. Surface passivation of crystalline silicon solar cells: a review [J]. Prog Photovolt: Res Appl|, 2000, 8 (5): 473-487.

二级参考文献12

  • 1Knobloch J,Glunz S W, Biro D, et al. Solar cells with efficiencies above 21% processed from Czochralski grown silicon [ C ]//IEEE Photovoltaic Specialist Conf., 1996:405-408.
  • 2Zhao J, Wang A, Green M A. Performance degradation in Cz(B) cells and improved stability high efficiency PERT and PERL silicon cells on a variety of SEH MCZ(B), Fz(B) and Cz(Ga) SubstratesEJ]. Progress in Photovoltaics, 2000, 8(5):549-558.
  • 3SchmidtJ, Aberle A G, Hezel R. Investigation of carrier lifetime instabilities in Cz-grown silicon[C]// 26th IEEE Photovoltaic Specialist Conf. , 1997:13-18.
  • 4Schmidt J, Hezel R. Light-induced degradation in Cz silicon solar cells: fundamental understanding and strategies for its avoidance[C]//12th Workshop on Crystalline Silicon Solar Cell Materials and Processes, 2002:321-325.
  • 5Mulligan W P, Rose D H, Cudzinovic M J, et al. Manufacture of solar cells with 21% efficiency[C]// 19th European Photovoltaic Solar Energy Conf., 2004:387-390.
  • 6Cousins P J,Smith D D, Luan H C, et al. Gen Ill: improved performance at lower cost[C]//35th IEEE Photovoltaic Specialist Conf. , 2010:823-826.
  • 7Zhao J,Wang A. High efficiency rear emitter PERT cells on Cz and Fz n-type silicon substrates[C]//IEEE 4th World Conf. on Photovoltaic Energy Conversion, 2006:996-999.
  • 8KinoshitaT, Fujishima D, Yano A, et al. Theapproaches for high efficiency HIT solar cell with very thin (% 100 ram) silicon wafer over 230/00[C]//26th European Photovoltaic Solar Energy Conf. , 2011:871- 874.
  • 9TsunomuraY, Yoshimine Y, Taguchi M, et al. Twenty-two percent efficiency HIT solar cell[J]. Solar Energy Materials and Solar Cells, 2009, 93 (6) : 670- 673.
  • 10Sakata H, Tsunomura Y, Inoue H, et al. High- efficiency HIT solar cell on thin (:100 :m) silicon wafer[C]//24th European Photovoltaic Solar Energy Conf. , 2009:1690-1693.

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