GaAs研磨片化学腐蚀均匀性的分析

Analysis of uniformity in lapped wafers with chemical etching

采用不同的化学腐蚀方法 ,探讨了不同体系成份、温度、腐蚀过程的吸放热对晶片均匀性的影响 ,提出了氨水系列 ,进行晶片化学腐蚀 ,晶片厚度均匀性 1 1 .47% ,为下步工艺提供平整度较好的晶片。

Influences of composition, heterogenety, temperature, endothermal reaction, exothermal reaction in chemical etchants on the uniformity of the lapped GaAs wafer are investigated. Based on the investigation, ammonia series are proposed to use as the etchant and the wafer uniformity of 1%~1.47% is achieved, and the GaAs wafer with the better flatness can be provided for the next process.