电子浴辅助阴极电弧源法合成AlN薄膜影响因素研究

Study of the Effects of Process Parameters on Synthesis of Aluminium Nitride Thin Film Using Activated Reactive Ion Plating with Cathode arc Source Assisted by Electrons Bath

研究了 N2 流量、阴极偏压、工作气压等工艺参数对电子浴辅助阴极电弧源法合成 Al N薄膜质量的影响规律及其原因。

A new synthesizing aluminum nitride thin film method,which used activated reactive ion plating with cathode arc source assisted by electrons bath,was introduced.The effect law of process parameters(including nitrogen flow rate,substrate bias potential,gas pressure etc.)on the quality of synthesized aluminum nitride thin film was investigated.