摘要
室温下在p Si(1 0 0 )上采用直流反应磁控溅射法外延生长了ZnO薄膜。XRD测量表明了ZnO是高度c轴单一取向生长的 ,XRC测量则表明了ZnO的高质量。在室温下的PL测量中见到了带边发射 ,其强度与晶体质量有关。
At room temperature ZnO thin films were eptaxially deposited on p Si(100) substrate by DC reactive magnetron sputtering.The XRD patterns of ZnO films showed the sharp diffraction peaks for ZnO(0002), which indicates that the as grown films are highly C axis oriented .The X ray rocking curve(XRC) of ZnO(0002) peak showed that the high quality ZnO was obtained. The band edge emission was observed in the PL spectra at room temperature. Its intensity was related to quality of the crystal.
出处
《功能材料与器件学报》
CAS
CSCD
2000年第4期338-341,共4页
Journal of Functional Materials and Devices
基金
863计划资助项目(863-715-001-0162)
