掺Si对MOCVD生长的GaN单晶膜的黄带发射及生长速率的影响

Influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD

对MOCVD生长GaN :Si薄膜进行了研究 ,研究表明随SiH4 TMGa流量比增大 ,GaN :Si单晶膜的电子浓度增大 ,迁移率下降 ,X射线双晶衍射峰半高宽增加 ,同时带边发射强度得到了大大的提高 ,并报导了随SiH4 TMGa流量比增大 ,GaN :Si的生长速率降低的现象。研究结果还表明 ,预反应对GaN :Si单晶膜黄带发射影响很大 ,预反应的减小可以使黄带受到抑制。

The growth of Si doped GaN films was performed by MOCVD using home made reactors. Study of the effect of Si-doping indicated that the intensity of yellow band emission in GaN:Si films was largely influenced by the parasitic reactions in the gas phase. It can be depressed if the parasitic reactions was lighten. it can also be observed that the growth rate of GaN :Si decreased with the increasing of the SiH 4/TMGa ratio.