摘要
利用RDS测试系统 ,可以在近垂直入射条件下 ,测量出样品的反射系数在样品平面内两个互相垂直的方向上的细微差异 ,即所谓平面内光学各向异性。它对研究半导体材料及其量子阱超晶格等低维结构中的平面内光学各向异性、半导体表面重构和对外延生长过程中的实时监控都具有重要作用。本系统已为研究工作提供了大量数据。
By means of RDS detection system, slight difference of reflectance coefficients for samples can be measured in two mutually vertical directions on the plane of the sample under approximately perpendicular incident condition, this is known as in plane optical anisotropy. It plays a significant role in the studies of the in plane optical anisotropy of the lower dimensional structures of semiconductor materials their quantum well superlattices, or the semiconductor surface restructuring, or the real time monitoring in the semiconductor epitaxy growth process. The present system has provided a great number of data for research work.
出处
《功能材料与器件学报》
CAS
CSCD
2000年第4期388-392,共5页
Journal of Functional Materials and Devices