电子束和接触式曝光机的匹配和混合曝光(英文)

Electron beam/optical stepper mixes and matches lithography

Ⅰ 线光致抗蚀剂可以同时被电子束和光学曝光系统曝光 ,在 5 0KV加速电压下 ,其曝光剂量为 5 0 1 0 0 μC cm2 ,曝光后在 0 .7%NaOH溶液内显影 1min。其灵敏度比PMMA快 5倍 ,分辨率为 0 .5 μm。采用两种方法制备GaAsPHEMT ,首先 ,用I线光致抗蚀剂 ,源、漏及栅的全部都采用电子束曝光 ,制备了 0 .5 μm栅长的GaAsPHEMT。将源、漏及栅分割成两部分 ,其中的精细部分由电子束曝光 ,其余部分由光学曝光系统曝光 ,用这种方法制备了 0 .2 5 μm栅长的GaAsPHEMT。

The I line photo resist is used as resist exposed by both E beam and optical system. It is exposed in beam system at 50KV, with dose between 50 100μC/cm 2 and developed for 1min. in 0.7% NaOH solution. The sensitivity of I line photo resist is 5 times than that of PMMA. Its resolution can get to 0.5μm. Two methods are employed to fabricate GaAs PHEMT. First, all of source and drain as well as gate was exposed by E beam using I line photo resists. The GaAs PHEMT with 0.5μm gate length is fabricated by this way. Second, E beam lithography is only used to define the fine part of source and drain as well as gate. All the other parts are patterned on a conventional contact optical system. The GaAs PHEMT with 0.25μm gate length is fabricated by this way.