线切割硅片表面探究

Study of Wafer Surface in Multi-Wire Sawing

硅片的表面损伤层,关系到切割后破片率及面的形状等。通过对硅片表面分析,发现硅片表面呈蜂窝状,有大孔、小孔和微孔。硅片侧面边缘呈山峰山沟状,并伴随有裂纹,从外向里分为表面镶嵌层和缺陷应力层。通过对硅片表面损伤的形成机理研究,发现通过以下调整可以减小表面损伤和提高表面质量:一是减小切割时的晶体所受到的垂直压力;二是调整碳化硅的直径分布系数,圆度系数,堆积密度。

Wafer surface damage affect the rate of broken wafer and the shape of the surface. Through the wafer surface, the wafer surface are cellular and macropores , minipore and micropore can be see on it. Wafer is like on mountain trench, at the meantime, there are cracks on wafer edge, from extent to inside, named surface parquetry layer and flaw stress layer. Through study on the shaped mechanics of wafer damage layer, wafer damage layer can be reduced from the following action： reducing the pressure at right angle on wafer in cutting; adjusting the diameter distribution coefficient, circular degree, stacking density. IF the wafer affected layer can be reduced, the wafer broken rate can be decreased and improve the surface quality.