摘要
提出了一种新型电流模式的带隙基准电压源结构,与传统带隙基准源不同,通过电流模式高阶曲率补偿技术,消除了高阶温度系数对基准电压的影响,得到一个与温度相关性较小的基准电压。电路采用Chartered 0.35μm工艺进行设计,仿真验证结果表明,在-40℃～125℃温度范围内,温度系数为7.25×10-6/℃,基准电压平均值为1.114V,电源抑制比为-89.28dB。
A novel current-mode bandgap voltage reference source was presented. In this circuit, a reference voltage with minimal temperature-dependency was obtained by using current-mode higher-order curvature compensation to eliminate effects of higher-order temperature coefficient on reference voltage. Simulation based on Chartered 0. 35/lm process showed that the novel reference source had a temperature coefficient of 7. 25× 10-6/℃ in the temperature range from -40 ℃ to 125 ℃, an averaged reference voltage of 1. 114 V, and a power supply rejection ratio of -89. 28 dB.
出处
《微电子学》
CAS
CSCD
北大核心
2013年第4期457-459,463,共4页
Microelectronics
基金
国家自然科学基金资助项目(61204040
60976028)
北京市自然科学基金资助项目(4123092)
教育部博士点基金资助项目(20121103120018)
关键词
带隙基准源
曲率补偿
温度系数
电源抑制比
Bandgap voltage reference source
Curvature compensation
Temperature coefficient
PSRR
