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N面GaN材料及器件的研究进展 被引量：1

Progress in the Development of N-Polar GaN Material and Device
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摘要 N面GaN材料及器件是宽禁带半导体技术中的重要研究内容。对N面GaN材料及器件的概念、优势、研究现状以及存在的问题进行了系统的分析。在此基础上,论述了N面GaN材料及器件未来的发展趋势。 N-polar GaN material and device are important subjects in the research of wide bandgap semiconductor technologies. The concepts of N-polar GaN material and device and its advantages were presented. The latest development of N-polar GaN material and device, as well as related issues, was analyzed systematically. Further- more, the developing trend of N-polar GaN material and device in the future was discussed.
作者 姚艳丽 张进成
机构地区 西安电子科技大学微电子学院
出处 《微电子学》 CAS CSCD 北大核心 2013年第4期581-585,592,共6页 Microelectronics
关键词 N面GaN 宽禁带半导体 微波功率器件 光电器件 探测器 N-polar GaNs Wide bandgap semiconductors Microwave power devices Optoelectronic device Detector
分类号 TN303 [电子电信—物理电子学] TN304 [电子电信—物理电子学]
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参考文献15

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同被引文献13

  • 1吴晓薇,郭子政,阎祖威.GaAlN/GaN量子阱中电子的激发态极化及其压力效应[J].量子电子学报,2005,22(1):75-80. 被引量：6
  • 2MONROY E, SARIGIANIDOU E, FOSSARD F, et al. Growth kinetics of N-face polarity GaN plasma-assisted molecular-beam epitaxy [ J ]. Applied Physics Letters, 2004, 84 (18): 3684-1-3684-3.
  • 3RAJAN S, WONG M, FU Y, et al. Growth and electri- cal characterization of N-face A1GaN/GaN heterostructures [ J]. Japanese Journal of Applied Physics, 2005, 44 (ILL): L1478-L1480.
  • 4KRISHNAMOORTHY S, NATH D N, AKYOL F, et al. Polarization-engineered GaN/InGaN/GaN tunnel diodes [ J ]. Applied Physics Letters, 2010, 97 ( 20 ) : 203502-1-203502-3.
  • 5LI Z Q, LESTRADE M, XIAO Y G, et al. Effects of polarization charge on the photovohaic properties of InGaN solar cells [ J ]. Physica Status Solidi: A, 2011, 208 (4): 928-931.
  • 6AKYOL F, NATH D N, G13R E, et al. N-polar III- nitride Green ( 540 nm) light-emitting diodes [ J ]. Japanese Journal of Applied Physics, 2011, 50 (5) : 052101-1-052101-3.
  • 7LIU C, LU T P, WU L J, et al. Enhanced perfor mance of blue light-emitting diodes with InGaN/GaN su- perlattice as hole gathering layer [ J]. IEEE Photonics Technology Letters, 2012, 24 (14): 1239-1241.
  • 8VURGAFTMAN I, MEYER J R, RAM-MOHAN L R. Band parameters for III-V compound semiconductors and their alloys [ J ]. Journal of Applied Physics, 2001, 89 (11): 5816-5875.
  • 9AMBACHER O, SMART J, SHEALY J R, et al. Two- dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face A1GaN/GaN heterostruetures [J]. Journal of Applied Physics, 1999, 85 (6): 3222-1-3222-12.
  • 10彭冬生,冯玉春,牛憨笨.MOCVD法横向外延过生长GaN薄膜[J].电子元件与材料,2009,28(2):66-69. 被引量：3

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微电子学
2013年 第4期

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