摘要
为了显著降低K波段雷达收发前端的尺寸,提高系统性能,研究了一种基于低阻硅埋置腔体和BCB/Au金属互连的毫米波系统级封装技术,采用两层BCB涂覆的方式改善了BCB覆盖不均的情况。制备的K波段雷达收发前端中包含压控振荡器、低噪声放大器、混频器及功分器,尺寸仅有6.4 mm×5.4 mm,测试结果显示,在22.5 GHz到22.9 GHz的频带内,发射功率大于11 dBm,中频增益大于10 dB,发射端到中频输出端隔离度大于30 dB,满足系统小型化、高性能的需求。
To significantly reduce the size of K-band radar transceiver and improve the system performance,a waferlevel millimeter wave system in package process based on embedded package structure and BCB / Au interconnection was present. The K-band radar transceiver system contained a voltage controlled oscillator,a mixer,a low noise amplifier embedded in a lossy-silicon wafer and a divider. The whole K-band radar front-end was implemented in 6. 4× 5. 4 mm2. According to the measured results,the transmitted power was more than 11 dBm within the operating frequency range（ 22. 5 GHz ~ 22. 9 GHz）,IF gain was better than 10 dB and the isolation of LO-IF was more than30 dB which met the requirement of system miniaturization.
出处
《电子器件》
CAS
北大核心
2013年第5期623-626,共4页
Chinese Journal of Electron Devices
基金
国家重点基础研究发展计划项目(2009CB320207)
