漏极注入HPM诱发的nMOSFET热电损伤机理

Research on thermoelectric injury mechanism of nMOSFET due to high power microwave injected from drain

研究了nMOSFET漏极注入HPM诱发的器件热电损伤机理。建立了nMOSFET在HPM作用下的二维电热模型,获得了器件内部电场、电流密度以及温度对HPM作用的响应规律,分析了源-衬底PN结、漏-衬底PN结附近器件内部温度分布随HPM作用时间的变化关系。结果表明nMOSFET器件漏极注入HPM时,器件内部峰值温度出现在漏端PN结附近,且具有累积效应。当温度达到硅材料硅熔点,器件内部漏端PN结表面附近形成熔丝,器件损毁。该机理分析得到的器件特性变化与器件HPM损伤实验的测试结果相吻合,验证了文中描述的器件损伤机理。

The thermoelectric injury mechanism of nMOSFET due to HPM injected from drain is researched. First- ly, a two-dimensional electro-thermal model is established for the typical silicon-based MOSFET under HPM influ- ence. Using the model, the responses of the internal electric field, the current density and the temperature of de- vices to HPM injection is obtained. Then the change of the internal temperature distributions inside devices with the HPM injection time is analyzed. The simulation and analysis results show that the peak temperature occurs near the drain-substrate PN junction. Because the internal peak temperature of devices continually increase to the melting point of the silicon material under HPM injection, the fuse resistor forms in the region near the drain-substrate PN junction firstly. As a result, the device is damaged because of the fuse generation. At last, through comparison of the I-V characteristics of the devices considering the fuse structure in devices caused by HPM with the damaged de- vices in HPM injection experiment, the damage mechanism of devices under HPM injection introduced in this paper is confirmed.