GaAlAs/GaAs单量子阱列阵半导体激光器

GaAlAs/GaAs Single Quantum Well Array Semiconductor Lasers

分析了影响列阵半导体激光器输出功率的因素。利用分子束外延生长法生长出 Ga Al As/Ga As梯度折射率分别限制单量子阱材料 ( GRIN- SCH- SQW)。利用该材料制作出的列阵半导体激光器输出功率达到 10 W(室温 ,连续 ) ,峰值波长为 80 6～ 80

In this paper, the factors influencing the ultimate output power of laser diodes are analyzed. The GaAlAs/GaAs material with gradient refraction index, separate confinement single quantum well structure has been grown by MBE. The CW output power of the array diode laser is 10 W. The peak wavelength is 806～809 nm.