3 - 12 Damage Production in LiTaO3 Crystal Induced by H- and He-ions Implantation
3 - 12 Damage Production in LiTaO3 Crystal Induced by H- and He-ions Implantation
参考文献4
-
1P. Giinter, J.P. Huignard, Photorefractive Materials and Their Applications: Materials, Springer Verlag, (2007).
-
2K.M. Wang, F. Chen, et ah , Opt. Commun. , 196(2001)215.
-
3I..A. Kappers, K.L. Sweeney, et ah , Phys. Rev. , B31(1985)6792.
-
4J. F. Ziegler, SRIM, Available from: % http://www, srim. org/.
-
1Vall.,CE,唐源.离子植入在电化学研究中的应用[J].国外核聚变与等离子体应用,1993(3):69-73.
-
2Pang Lilong Wang Zhiguang Zang Hang Yao Cunfeng Sun Jianrong Wei Kongfang Shen Tielong Sheng Yanbin Gou Jie Ma Yizhun Zhu Yabin.UV/VIS/IR Study of LiTaO3 after H-ions Implantation[J].近代物理研究所和兰州重离子加速器实验室年报:英文版,2009(1):85-86.
-
3Sheng Tao ZHANG,Zong Qing HUANG(Department of Applied Chemistry.Chongqing University. Chongqing 630044).EFFECT OF COBALT ION IMPLANTATION ON THE ELECTROCHEMISTRY OF NICKEL ELECTRODE[J].Chinese Chemical Letters,1994,5(11):979-982.
-
4薛书文,祖小涛,邵乐喜,袁兆林,向霞,邓宏.Preparation of p-type ZnO:(Al, N) by a combination of sol-gel and ion-implantation techniques[J].Chinese Physics B,2008,17(6):2240-2244. 被引量:2
-
5Pivin,JC,林倩晶.利用离子植入的聚酰亚胺的硬化及脆变[J].国外核聚变与等离子体应用,1995(2):72-77.
-
6Pang Lilong Wang Zhiguang Jin Yunfan Sun Jianrong Yao Cunfeng Cui Minghuan Wei Kongfang Shen Tielong Sheng Yanbin Zhu Yabin Li Yuanfei Wang Ji Zhu Huiping.Modification of LiTaO3 Crystal by Low-energy He-ion Implantation[J].IMP & HIRFL Annual Report,2011(1):84-85.
-
7Liu Changlong,Hou Mingdong,Wang Zhiguang,Cheng Song,Sun Youmei,Zhu Zhiyong,Jin Yunfan,Wang Yinshu,Li Changlin and Meng Qinghua.EPR Study of Radiation Damage in Si after High Energy Implantation of Ar Ions[J].IMP & HIRFL Annual Report,1996(1):82-82.
-
8苏红,周航,王世兴,陈琼州,梁华伟,阮双琛.Terahertz transmission properties of Cr ion implantation glass[J].Chinese Optics Letters,2010,8(4):425-427. 被引量:2
-
9吴先映,廖斌,梁宏,张旭,刘安东.Theoretic and Experimental Studies on Titania Nanotube Doped with Ag Metal Ions[J].Chinese Journal of Structural Chemistry,2011,30(9):1332-1340. 被引量:2
-
10STUDIES OF THE LATTICE DAMAGE CAUSED BY ION IMPLANTATION INTO Al<sub>x</sub>Ga<sub>(</sub>1-x<sub>A</sub>S/GaAs[J].Chinese Chemical Letters,1994,5(8):707-710.