3 - 26 Threshold Ion Range for Accurate Single Event Upset Measurementin SO1 SRAM Devices
3 - 26 Threshold Ion Range for Accurate Single Event Upset Measurementin SO1 SRAM Devices
参考文献3
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1ESA/SCC Basic Specification No. 25100= Single Event Effects Test Method and Guidelines, (2002).
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2EIA/JESD57: Test Procedure for the Measurement of Single-event Effects in Semiconductor Devices from Heavy Ion lrra diation, (1996).
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