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四配位非晶碳薄膜的研究进展 被引量:2

REVIEW OF THE TETRAHEDRAL AMORPHOUS CARBON FILM
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摘要 四配位非晶碳薄膜是近年来发展的一种新型宽带隙半导体材料 ,具有独特的物理和化学特性。本文对四配位非晶碳薄膜的研究意义 ,制备方法 ,形成机理 ,结构和性能表征及应用前景作较全面的介绍。 Tetrahedral amorphous carbon films (ta C) have become a new type of wide band gap amorphous materials because of its valuable physical and chemical properties. In this paper, the deposition process, growth mechanism, basic properties and application of ta C films are reviewed.
出处 《新型炭材料》 SCIE EI CAS CSCD 2000年第4期75-79,共5页 New Carbon Materials
基金 广东省自然科学基金!(9945 6 0 )
关键词 四配位非晶碳薄膜 制备方法 形成机理 结构 性能 Tetrahedral amorphous carbon Deposition process Growth mechanism Structure and properties Application\
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参考文献2

  • 1Tay B K,Diamond Relat Mater,1999年,8卷,1328页
  • 2Chen Dihu,J Non Crystalline Solids,1999年,254卷,161页

同被引文献60

  • 1朱嘉琦,韩杰才,高巍,孟松鹤.不同厚度四面体非晶碳薄膜的拉曼表征和内应力[J].新型炭材料,2006,21(1):59-63. 被引量:4
  • 2李春燕,潘凯,吕宪义,李明吉,刘兆阅,白玉白,李博,金曾孙.掺硼多晶金刚石膜的电化学性能研究[J].高等学校化学学报,2006,27(11):2136-2139. 被引量:10
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