摘要
以三苯基氧膦为溶剂、GaCl3为原料、六甲基二硅胺烷为氮源,采用高温溶剂法合成了GaN纳米材料。用X-射线衍射(XRD)、透射电子显微镜(TEM)和傅里叶变换红外光谱(FTIR)对产物进行了表征,结果表明得到了纳米结构的GaN粉末。
Nano-structured GaN was synthesized by solvothermal method, using triphenylphosphine oxide as the solvent, GaC13 as raw materials and hexamethyl disilazane as the nitrogen source. The GaN powders were characterized by X-ray diffraction, transmission electron microscopy and FT-IR spectrograph. The results show that the nano-structural GaN are obtained.
出处
《广东化工》
CAS
2013年第19期30-31,共2页
Guangdong Chemical Industry
基金
河北省教育厅科研项目(2005201)
