期刊文献+

Rapid evaluation method for the normal lifetime of an infrared light-emitting diode

Rapid evaluation method for the normal lifetime of an infrared light-emitting diode
原文传递
导出
摘要 : Based on the Arrhenius model, a rapid evaluation method for an infrared diode's normal lifetime is proposed, and the theoretical model is constructed. Accelerated life testing of an infrared light-emitting diode (IRLED), which takes less time than usual, is carried out under temperature and electric current stress. Using this method, the activation energy and the IRLED's normal lifetime are calculated and analyzed. Key words: Arrhenius model; acceleration lifetime test; IRLED; activation energy Based on the Arrhenius model, a rapid evaluation method for an infrared diode's normal lifetime is proposed, and the theoretical model is constructed. Accelerated life testing of an infrared light-emitting diode (IRLED), which takes less time than usual, is carried out under temperature and electric current stress. Using this method, the activation energy and the IRLED's normal lifetime are calculated and analyzed. Key words: Arrhenius model; acceleration lifetime test; IRLED; activation energy
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第11期61-64,共4页 半导体学报(英文版)
关键词 Arrhenius model acceleration lifetime test IRLED activation energy Arrhenius model acceleration lifetime test IRLED activation energy
  • 相关文献

参考文献6

二级参考文献39

  • 1赵楚军,李宏建,崔昊杨,何英旋,彭景翠.电场对单层有机电致发光二极管复合发光的影响[J].应用光学,2005,26(2):47-50. 被引量:3
  • 2张建平.基于LSM的红外LED加速寿命试验数据的统计分析[J].半导体光电,2005,26(2):92-96. 被引量:5
  • 3金玲.GaAs红外发光二极管加速寿命试验[J].半导体光电,1995,16(1):77-81. 被引量:15
  • 4吕正.LED性能参数测量的现状与建议(下)[J].中国照明电器,2007(2):18-22. 被引量:1
  • 5HU J, YANG L, KIM L, et al. The ageing mechanism of high-power InGaN/GaN light-emitting diodes under electrical stresses[J].Semiconductor Science and Technology, 2007, 22 (12) : 1249-1252.
  • 6MANYAKHIN F, KOVALEV A, YUNOVICH A E. Aging mechanisms of InGaN/A1GaN/GaN light-emitting diodes operating at high currents [ J ]. MRS Intemet J of Nitride Semiconductor Research, 1998(3) :53-58.
  • 7MENEGHESSO G, LEVADA S, ZANONI E. Reliability of visible GaN LEDs in plastic package [J]. Micmelectmnics Reliability, 2003,43 ( 9 ) : 1737 - 1742.
  • 8MENEGHESSO G, LEVADA S, ZANONI E. Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels [ C ] //IEEE Int Sym on Reliability Physics, Phoenix Arizona, USA,2004 : 474-478.
  • 9LUMILEDS Lighting-公司.Luxeon^TM Power light的可靠性应用摘要AB25[K].美国:LUMILEDS Lighting有限公司,2004:2-5.
  • 10YAMAKOSHI S, HASEGAWA O, HAMAGUCHI H, et al. Degradation of high-radiance A1GaAs LED [ J ]. APL, 1977,31 (9) : 626-628.

共引文献69

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部