摘要
纳米粒子的电容对由纳米点陈列所形成的单电子器件是一个十分重要的参数。基于少体理论,提出了计算纳米粒子量子点充电电容的理论模型,由此可以预测出室温下出现库仑台阶等单电子现象的最大纳米粒子粒径。采用简谐势模型计算模拟了CdS、PbS半导体纳米粒子的充电电容,发现CdS、PbS纳米粒子的尺寸上限为11与5 nm。理论计算结果与实验相吻合。
The capacitance of nanoparticles is a very important parameter for the new kind of single-electron devices which are formed by nanoparticle quantum dot arry. Based on the few-body theory, the theoretical model about quantum dot capacitance of nanoparticles are put forward. From this view, the maximum nanopariticle sizes, in which the room temperature single-electronics phenomena can still be observed, have been forecasted. By means of harmonic potential model, the capacitance of semiconductor nanoparticles CdS, PbS have been Simulated. The Simulation results show the maxinums of CdS, PbS nanoparticle sizes are 11 nm and 5 nm, respectively. The theoretical simulation results are in agreement with experimentals.
基金
国家自然科学基金!(No.69870227
69971007)
霍英东基金
关键词
少体理论
纳米粒子
电容
硫化镉
硫化铅
半导体
Harmonic potential model, Few-body theory, Nanoparticles, Capacitance.