三极管放大倍数的脉冲测试

Pulse of transistor magnification

阐述了三极管的参数及3种工作状态,并深入研究温度对三极管相关参数的影响。为了降低温度和环路间寄生振荡对测试系统的影响,能更加准确测量三极管的放大倍数.通过硬件闭环电路的设计,实现了300μs内三极管放大倍数的测试。采用电路的布局和硬件相位补偿,减少多级放大器与被测器件共同构成的闭环回路而产生的电路振荡,从而提高了hFE测试的真实性和精准度。

This article describes the transistor parameters and three moaes ok opera-u,,, ^- on the transistor-related parameters. In order to reduce the temperature and the loop between the parasitic oscillation of the test system, the magnification of the transistor can be more accurately measured. By a dosed hardware circuit design, achieving amplification test in 300 μs. Through the circuit layout and hardware phase compensation, reduce the multi- stage amplifier constitute the DUT closed-loop circuit generated shock,thereby increasing test authenticity and accu- racy.