摘要
基于TSMC 0.5μm 2P2M CMOS高压混合信号工艺设计了一种高精度、低温度系数带隙电压基准源。为了降低温度系数,电路采用MOS器件,利用I D-V GS关系来进行二阶补偿,没有采用传统的放大器反馈模式,从而极大地简化了电路结构,同时也省去了因放大器失调所带来的困扰。电路在Cadence软件上完成设计并用Spectre进行了仿真验证。结果表明,在6 V电源电压下,电路产生的基准电压为1.2 V,在-30～130℃温度范围内温度系数为1.4×10-6(ppm)/℃,低频下电源抑制比为-60 dB,功耗为0.18 mW。
A high-precision,low temperature coefficient band-gap reference voltage source based on TSMS 0.5 μm 2P2M CMOS high voltage mixed signal process is presented.To to reduce the temperature coefficient,MOS device and its ID-VGs relationship is used to compensate the sec-ond order,not the traditional pattern of feedback amplifier,which greatly simplifies the circuit structure.At the same time problems caused by the amplifier disorder are omitted.Software Cadence and Spectre were used to complete the design,simulation and verification.Results show that when the power supply is 6 V,the reference voltage is 1.2 V,temperature coefficient is 1.4 x 10-6 （ppm）/℃ in the temperature range from-30 ～ 130 ℃,power supply rejection ratio is-60 dB at low frequency,power consumption is 0.18 mW.
出处
《科学技术与工程》
北大核心
2013年第29期8765-8768,共4页
Science Technology and Engineering
关键词
电压基准
温度系数
补偿
MOS器件
voltage reference
temperature coefficient
compensation
MOS device
