CO在Si(100)表面生长的光电子谱研究

Analysis of the growth mechanisms of CO/Si(100)-(2×1)interface by UPS.

本文着重介绍了 CO/ Si( 10 0 )界面 CO原子与表面 Si原子的相互作用 .在不同覆盖度或经不同退火温度处理 ,CO,Si原子之间存在不同的相互作用 .当覆盖度为 10 ML时经 350℃退火处理后 ,Si( 10 0 )表面将形成 COSi2

The growth mechanisms of CO/Si(100)-(2×1) interface were studied by UPS. At room temperature, when the coverage of Co film less than 0.4ML,the Co atom will react with Si atom in the Si(100) surface, when the coverage of Co atom larger then 1.8ML, the Co atom will grow layer by layer. When @>4ML, Si atom enteres into Co film and reactes with Co atoms after being annealed. At 350℃, CoSi 2 is formed. When the temperature up to 500℃, CoSi 2 will be covered by Si atoms.