硅片表面超薄氧化硅层厚度测量关键比对CCQM—K32

Key Comparison CCQM-K32 for Thickness Measurement of Ultrathin Silicon Oxides on Silicon Wafer

利用X射线光电子能谱技术，建立了硅片表面超薄氧化硅层厚度（小于10nm）准确测量方法。中国计量科学研究院参加了国际关键比对CCQM—K32，根据公布的国际关键比对结果，中国计量科学研究院的测量结果与参比的各国国家计量研究院的测量结果达到了等效一致，测量结果的不确定度为4．6％～7．0％。

Based on X-ray photoelectron spectroscopy technique, the National Institute of Metrology （NIM） of China developed an accurate analytical method and participated in the CCQM-32 international key comparison on thickness （less than 10 nm） measurement of ultrathin silicon oxides on silicon wafer. According to the published results of CCQM-K32, the NIM results with the expanded uncertainty of 4. 6% - 7.0% are agreed with the key comparison reference values and the degree of equivalence is gained.