先进制造封装中Sb掺杂64Sn-35Bi-1Ag钎焊腐蚀和电化学迁移

Corrosion and Electrochemical Migration of 64Sn- 35Bi-1 Ag Solder Doped with Sb in Advanced Electronic Machanical Packaging

采用动电位扫描结合SEM和XRD等技术研究先进电子制造封装过程中Sb掺杂对64Sn-35Bi-1Ag钎焊料在3%(wt.)NaCl溶液中腐蚀和电化学迁移行为影响。结果显示:Sb掺杂前后腐蚀电流密度(Icorr)随着Sb含量增加而有较显著的变化。其中当Sb含量小于1%时,随着Sb含量增加,其腐蚀电流密度(Icorr)减小。当Sb含量大于1%时,其腐蚀电流密度(Icorr)随着Sb含量的增大而增大;不论掺杂多少量,Sb掺杂后,钎料的腐蚀速率显著的增大,说明Sb掺杂后64Sn-35Bi-1Ag更易被腐蚀。电化学迁移结果显示,Sb掺杂前后,枝晶生长的速率显著不同,且枝晶成份有较大差异,掺杂后大于掺杂前,说明Sb掺杂不利于先进电子制造和封装技术。

The effects of Sb doping on corrosion and electrochemical migration behavior of 64Sn -35Bi - lAg （SBA） solder in 3.5% NaC1 solution （mass fraction） were investigated by potentiodynamic polarization coupled with SEM and XRD techniques. The results show that the corrosion current density （Icorr） decreases with Sb content increasing when percent of Sb is less than 1 wt. %. However, Icorr increased with Sb increasing when percent of Sb is larger than lwt. %, both are larger than that of corroded SBA solder without Sb doping. Electrochemical migration （ECM） result shows that the dendritic growth rate of SBA solder doped with certain Sb is longer than that of SBA solder without Sb doping. Furthermore, the dendritic content are different distinctly from each other, which proves that Sb doping is disbenefit to advanced electronic manufacturing and packaging