SiC单晶片研磨机理及试验

Mechanism and Experiment on Lapping SiC Single Crystal Wafer

SiC因其优良的物理机械性能而广泛应用于大功率器件以及IC领域。但其高的硬度和脆性导致其加工过程非常困难。本文分析了SiC单晶在研磨过程中的材料去除机理,讨论了塑性去除时磨粒的临界切削深度,建立了塑性条件下的材料去除模型。采用不同粒度的金刚石磨粒对SiC晶片进行研磨实验,验证了理论模型的正确性,结果表明在塑性模式下的材料去除能获得良好的表面形貌和较低粗糙度,同时对不同磨粒粒度的材料去除率进行了讨论。

Having excellent physical and mechanical properties SiC is widely used in the field of high- power and IC devices. However, it is difficult to machining for its high hardness and brittleness. This paper analyzes the material removal mechanism of SiC single crystal and discusses the critical depth of cut of single abrasive and develops the material removal model in ductile mode. The diamond abrasive with size of 1 μm, 0. 5 μm, 0. 25 μm and 0. 2 μm was used to conduct the lapping experiments on SiC single crystal wafer which validated the proposed model and the results showed that the better topography and surface roughness were obtained by removing material in ductile mode, and the material removal rate for different abrasive size was discussed.