溅射功率对ZnO:Si透明导电薄膜性能的影响

Effect of Sputtering Power on the Properties of Si Doped ZnO Transparent Conductive Films

采用直流磁控溅射法在室温玻璃基片上制备出了掺硅氧化锌(ZnO∶Si)透明导电薄膜。研究了溅射功率对ZnO∶Si薄膜结构、形貌、光学及电学性能的影响。结果表明,溅射功率对ZnO∶Si薄膜的生长速率、结晶质量及电学性能有很大影响,而对其光学性能影响不大。实验制备的ZnO∶Si薄膜为六方纤锌矿结构的多晶薄膜,且具有垂直于基片方向的c轴择优取向。当溅射功率从45 W增加到105 W时,薄膜的晶化程度提高、晶粒尺寸增大,薄膜的电阻率减小;当溅射功率为105 W时,薄膜的电阻率达到最小值3.83×10-4Ω·cm,其可见光透过率为94.41%。实验制备的ZnO∶Si薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。

Transparent conducting Si doped ZnO thin temperature by direct current magnetron sputtering. films were fabricated on glass substrates at room The effect of sputtering powers on structure, morphology, optical and electrical properties of ZnO： Si thin films were investigated when other deposition conditions were kept unchanged. The results showed that sputtering powers have a significant impact on the growth rate, crystal quality and electrical properties of ZnO： Si thin films, but have less impact on its optical properties. Thin films prepared possess polycrystalline hexagonal wurtzite structure with preferred orientation of （002） along the c-axis perpendicular to the substrate. As the sputtering power increases from 45 W to 105 W,the degree of crystallization of the films increases, the grain size increases and the film resistivity decreases. When the sputtering pressure, deposition time and target substrate distance are 5.0 Pa, 20 min and 60 mm, respectively, and are kept unchanged, the lowest resistivity of 3.83 × 10^-4 Ω. cm （sheet resistance = 6. 7 Ω/□ for thickness 571. 3 nm） is achieved at the direct current sputtering power 105 W and optical transmission is 94.41%. The ZnO： Si thin films prepared can be used as the transparent electrode of the thin film solar cells or liquid crystal displays.