摘要
分析新型SiC功率器件在实际应用中的基本特性,以升压斩波电路为载体,通过理论分析对SiC MOSFET栅极电阻对开关特性的影响,以及开关频率与传输效率的关系进行了阐述。同时,以SiC MOSFET功率器件为核心搭建了实验样机,依据实测数据对理论分析进行验证,并与同类型Si器件相互比较,得出了关于SiC功率器件在系统电路设计方面的优点和一些值得注意的问题。
This paper focuses on the basic characterization of new SiC power devices in practical application.With the Boost chopper as a carrier, theoretical analysis with the effects of SiC MOSFET gate resistance on switching character- istics,and the relationship between switching frequency and transmission efficiency are given.On this basis,experi- mental prototype is set up based on SiC MOSFET power device.The experimental results verify the validity of the the- oretical analysis, and compared with the same specification of Si device, some design advantages and considerations for the system implement are presented.
出处
《电力电子技术》
CSCD
北大核心
2013年第11期106-108,共3页
Power Electronics
基金
国家自然科学基金(51077076)
国家863高技术基金项目(2013AA050104)~~
关键词
功率器件
升压斩波电路
栅极电阻
：power devices
Boost chopper circuit
gate resistance
