(CoMgNi)O系材料的高温缺陷研究

Study on High Temperature Defect Structure of (CoMgNi)O

通过对 (Co Mg Ni) O系氧敏材料的电导率与氧分压及电导率与温度的关系分析 ,讨论了材料的氧敏机理和缺陷结构 ,由缺陷理论得出高温下材料的缺陷类型主要是单电离和双电离的金属缺位并导致 p型电导 ,由实验曲线得到了材料的某些参数 .

Dependence of the electrical conductivity of (CoMgNi) O materials on the oxygen partial pressure and the temperature were investigated. Oxygen sensing machanism were studied. The results show that of the defects of the matierals appear to s ingly inoized and doubly ionized metal vacancies and give rise to a p-type cond uctivity. Some parameters are presented from the experimental curves.