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关于超大规模集成电路制造中的应力迁移问题 被引量:3

The Problem About Stress Migration in the VLSI Manufacture
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摘要 应力迁移是影响集成电路 ( IC)金属配线可靠性的缺陷之一。它缘起于绝缘膜与金属配线之间的热应力。本文概要介绍两种性质的绝缘膜产生的两种应力缺陷以及检测方式 ,并分类说明金属膜厚、线宽、温度等与应力的关系。简要说明应力迁移产生的可能机理及目前采取的几种对策。 The stress migration is one of defect that determines metal routing reliability in the IC manufacture. It is result to the difference of thermal stress between the insulator′s film and metal routing. This article sketchily introduces two type stress defect because of the two type character of the insulator′s film, and inspection ways. Classify to narrate the relation between the stress and metal film′s thickness, routing width, temperature etc. Sketchily narrate the possible mechanism of causing the stress migration and nowadays how to deal with these problems.
出处 《电子器件》 CAS 2000年第4期262-266,共5页 Chinese Journal of Electron Devices
关键词 应力迁移 金属配线 ULSI 集成电路 制造 stree migration, Compressive stress, tensile stress, slit, void
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参考文献6

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同被引文献20

  • 1吴丰顺,张金松,吴懿平,郑宗林,王磊,谯锴.集成电路互连引线电迁移的研究进展[J].半导体技术,2004,29(9):15-21. 被引量:13
  • 2TUK N. Recent advances on electromigration in very-large-scale-integration of interconnects[J].J Appl Phys,2003,(09):5451-5452.
  • 3HUC,ROSENBERG R,LEE.K. Electromigration path in Cu thin-film lines[J].Appl Phys Lett,1999,(20):2945-2947.
  • 4LEAMING K,OLMEN J,MOON K. Electrical performance,reliability and microstructure of sub-45 nm copper damascene lines fabricated with TEOS backfill[J].Microelectronic Engineering,2007.2681-2685.
  • 5GEISS R,READ D. Defect behavior in aluminum interconnect lines deformed thermomechanically by cyclic Joule heating[J].Acta Materialia,2008.274-276.
  • 6RI S,SUGANO T,SAKA M. Thermal fatigue of high-purity aluminum thin films under thermal cycle testing[J].Strength Fracture and Complexity,2011.61-70.
  • 7RI S,SAKA M. Diffusion-fatigue interaction effect on hillock formation in aluminum thin films under thermal cycle testing[J].Mater Lett,2012.139-141.
  • 8SAKA M,YAMAYA F,TOHMYOH H. Rapid and mass growth of stress-induced nanowhiskers on the surfaces of evaporated polycrystalline Cu films[J].Scr Mater,2007.1031-1034.
  • 9LU Y,SAKA M. Fabrication of Al micro-belts by utilizing electromigration[J].Mater Lett,2009.2227-2229.
  • 10LU Y,TOHMYOH H,SAKA M. Comparison of stress migration and electromigration in the fabrication of thin Al wires[J].Thin Solid Films,2012,(09):3448-3452.

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