摘要
制备了结构为ITO/NPB(40 nm)/DPAVBi(x nm)/Alq3(30 nm)/LiF(0.5 nm)/Al的蓝绿色OLED器件.通过改变DPAVBi的厚度,研究其对器件性能的影响.当DPAVBi层厚度为20 nm时,器件的性能较好.在电流密度为38.79 mA/cm2时,效率为3.32 cd/A;在电压为21 V时,亮度为8 296 cd/m2.而且,随着电流密度的增加,四个器件的效率曲线变化非常平缓,说明器件的电流荧光湮没性较弱.当驱动电压从10 V增加到21 V时,器件的色坐标从(0.27,0.48)变化到(0.25,0.45),始终处于蓝绿光范围内,色度变化很小.
The devices were factured with the structure of ITO/NPB (d0 nm)/DPAVBi ( x nm)/Alq3 ( 30 nm) / LiF(O. 5 nm)/Al( 100 nm). DPAVBi with different thickness has effect on the performance of the devices. When the thickness of DPAVBi is 20 nm, the performance of the device is better than others. The device has a maximum luminance 8296 cd/m2 at 21V and maximum efficiency 3.32 cd/A at 38.79 mA/cm2. And the efficiency drops slowly when the current density increases. So, all the devices have the current weak fluorescence quenching. The CIE coordinates of the device varied from(0.27,0.48 )to(0.25,0.45 )when the voltage was changed from 10 V to 21V. They were well in the blue-green region.
出处
《吉林师范大学学报(自然科学版)》
2013年第4期126-128,共3页
Journal of Jilin Normal University:Natural Science Edition
基金
吉林省科技发展项目(20100510
20101512
201215221)
吉林省教育厅"十二五"科学技术研究项目(2011154
2012175
2012176
2013208)
关键词
电流密度
效率
亮度
荧光湮灭
current density
efficiency
luminance
fluorescence quenching