摘要
采用多光束应力实时测量装置监控并分析了磁控溅射Si和SiNx薄膜的总力及应力演化过程。在两种膜层中均观察到了应力释放及恢复现象。Si膜中应力是可逆的,而SiNx膜中应力是部分可逆的。物理吸附和解吸附分别是应力释放和恢复的主要原因。不可逆的应力分量来源于化学吸附,基于吸附机制建立了一个应力释放模型。
An in situ multi-beam optical stress sensor system was used to monitor and analyze the force per unit width and stress evolution during and after the deposition of magnetron-sputtered Si and SiNx films.A rapid stress relaxation,as well as a recovery,was observed in both films.Stress in Si films was reversible,while partially reversible in SiNx films.Physical adsorption and desorption are the main factors responsible for the stress relaxation and recovery.The non reversible stress component results from chemical adsorption.And a model based on adsorption is proposed to explain the stress relaxation. Keywords：stress relaxation; stress recovery; physical adsorption; chemical adsorption
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2013年第11期2826-2830,共5页
High Power Laser and Particle Beams
基金
国家自然科学基金委员会与中国工程物理研究院联合基金项目(10976030)
关键词
应力释放
应力恢复
物理吸附
化学吸附
stress relaxaVion
sress recovery
physical adsorption
chemical adsorption
