[001]织构和非织构CVD金刚石膜的电学特性

Electrical Properties of [001] Textured and Non-Texture d CVD Diamond Films

研究了[001]织构和非织构金刚石膜的暗电流-电压特性、电流-温度特性以及在稳态X射线辐照下的响应。结果表明[001]织构的金刚石膜相对非织构多晶金刚石膜具有大的暗电流和X射线响应,主要是由于非织构金刚石膜含有大量的晶粒间界,导致对载流子的传输产生强烈散射。在高于500K的温度区域内,随着温度的上升[001]织构和非织构的金刚石膜的电流都将以指数式上升,这与Si占据金刚石格点产生1.68eV的激活能有关。

In this paper,electrical properties of X-ra y detectors using [001] textured and non-textured CVD diamond films were characterized and investigated. Results indicated that dark current s and photocurrents by X-ray irradiation for the [001] textured CVD diamond film were greater than those for the non-textured one. The differences in dark currents and resistivities were attributed to a l arge number of grain boundaries contained in the non-textured diamond films. From the I-T curves, at the temperature higher than 500K, currents clearly followed an exponential behavior because of the activ ation energy of Ea=1.68eV which was normally attributed to Si tr apped to a vacancy in the diamond lattice.