射频磁控室温溅射(Pb,La)TiO_3薄膜退火前后的原子力显微镜分析

AFM Analysis of (Pb,La)TiO_3 Film Prepared by RF Magnet ron Sputtering at Room Temperature

采用射频磁控溅射技术在室温溅射((Pb,La)TiO3(PLT)薄膜,在600℃下退火2h,通过其XRD谱图和AFM照片分析,发现薄膜结晶良好,已形成均匀、连续、致密、表面平滑的完全钙钛矿结构的PLT铁电薄膜,退火对薄膜表面的粗糙度影响不大,薄膜的表面粗糙度主要由淀积过程决定。

The (Pb,La)TiO3 (PLT) thin films were prep ared by RF magnetron sputtering technology at room temperature,and anne aled at 600℃ in air for 2h. The XRD and AFM analyses show that the film is compact, continuous, even and pure perovskite PLT ferroelectr ic thin film. Annealing does not affect the roughness of the thin fi lm very much, and the roughness of the thin films depends mainly on the processing of deposition.