过渡金属氧化物薄膜阻变存储材料研究

Transition Metal Oxide Thin Film Based Nonvolatile Resistive Random Access Memory

随着半导体技术和集成电路的进步,器件的集成度不断提高,器件的特征尺寸不断减小,基于电荷存储的传统非易失性随机存储器面临着物理和技术上极限的挑战.阻变式存储器(RRAM)作为新一代存储器件,因其具有结构简单、制备简便、存储密度高、擦写速度快、写入电流小等优势受到广泛研究.针对过渡金属氧化物薄膜RRAM的研究概况,从RRAM的基本原理、材料体系、存储机理和器件应用所面临的困难等方面对RRAM进行了综述.

With the rapid developing of semiconductor industry and the increasing inegration level of electronic de- vices, the characteristicl dimention of the microelectronic devices become smaller and samller, the tranditional non- volatile memories based on strorages will reach their physical and teachnological limit. As a kind of new immerging memories, resistive random access memory （RRAM） attracts intensive interests owing to its advantages such as simple structure, compatible with conventional CMOS process, high writing and reading speeds, low writing current etc. This paper gives a brief overview on transition metal oxides thin film based RRAM, including the basic working principles, performance criterions, material issues, resistive switching mechanism, as well as challenges on the way to real applications.