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不同衬底的钴(Co)膜的超快动力学研究

The study of ultrafast dynamics of cobalt films on different substrates
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摘要 通过磁控溅射镀膜法制备了不同厚度的钴薄膜,利用飞秒激光泵浦探测技术研究了衬底材料分别为单晶硅、K9玻璃以及Tou玻璃的钴薄膜内部的超快动力学变化。实验结果表明,当用80mW的泵浦激光脉冲加热不同厚度、不同衬底的钴膜时,电子的加热时间不变,均为0.1344ps;而电子的热化时间则会发生变化,且与薄膜厚度和衬底材料均有关。在电-声子发生非平衡弛豫阶段,对于不同衬底材料的钴膜,其瞬态反射率曲线的变化趋势也不同。 K9 glass substrates and Tou glass substrates,sepa-rately,by magnetron sputtering technique.The ultrafast dynamics of Co films were studied by using femtosec-ond laser pump-probe technology.The results show that,when the pumped power of femtosecond laser pulse was 80mW,and both the substrates and the thickness of cobalt films were not the same,the heating time of electrons in films was equal,was 0.1344ps;however the thermalized time of electrons in films was diverse,it was relative to the thickness and the substrates of Co films.Besides,when the substrates of Co films were changed,during the nonequilibrium lasting time of electrons,the transient reflectance curves were different.
出处 《功能材料》 EI CAS CSCD 北大核心 2013年第22期3315-3318,共4页 Journal of Functional Materials
基金 国家重点基础研究发展计划(973计划)资助项目(2011CB013004) 国家自然科学基金资助项目(11204107) 江苏省高校自然科学研究资助项目(13KJB510006 13KJB460004) 江苏高校优势学科建设工程资助项目(PAPD) 应用非线性科学与技术浙江省重中之重学科开放基金资助项目(xkz11208)
关键词 飞秒激光 钴膜 瞬态反射 超快动力学 femtosecond laser transient reflectance cobalt films ultrafast
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参考文献9

  • 1Smetanina E o. Kornpaners V o, Chekalin S V, er al. Anti-stokes wing of femtosecond laser filament supercon?tinuum in fused silica[J]. Optics Letters, 2013, 38( 1): 16-18.
  • 2Lancaster D G, Gross S, Ebendorff-heidepriem H, et al. 2. lVm waveguide laser fabricated by femtosecond laser direct-writing in Ho' ?Im' : ZELAN glass[J]. Op?tics Letters, 2012,37 (6):996-998.
  • 3Fletcher L 13, Witchcr] J. ct al. Direct femtosecond laser waveguide writing inside zinc phosphate glass[.J J. Optics Express, 2011, 19: 7929-7lJ]6.
  • 4Chapman H\I. Fromme r. Barty A, et al. Fcm toset-ond Xray protein nanocrystallograpby[.J]. Nature. 2010. ,170: 73-77.
  • 5陈谦,周明,黄宗明,李健,蔡兰.飞秒激光烧蚀制备纳米结构ITO薄膜[J].功能材料,2011,42(1):158-160. 被引量:2
  • 6Komarov P L, Burzo M C;. Kaytaz C. et al. Transient thermo-reflectance measurements of the thermal conduc?tivity and interface resistance of metallized natural and isotopically-pure silicon[J]. MicroelectronicsJournal. 2003, 34 :l1l5-1118.
  • 7Stevens RJ. Smith AN.\Iotris P M. Measurement of thermal boundary conductance of it serics of mct al-diel.?: (ric interfaces by the transient thermorcflectancc tech?nique[J].Journal of Heat Transfer. ZOO'). 127: srs- 323.
  • 8Lysenko S. Rua A.J, Vikhnin V. ct al. Light-induced ul t rafast phase transitions in VO, thin film[J]. Applied Surface Science. 2006. 2,,2: :'512-;"51S.
  • 9Agranat M B, Ashi i kov S 1. Anisirnov S 1. e t al, Forma?tion of absorbing beterogeneous plasma layer by[ern to second laser-induced melting and ablation of silicon[J l. Applied Physics A-Materials Science 6. Processing. 2009. 9: 879-887.

二级参考文献13

  • 1Kim H, Horwitz J S, Kushto G P, et al. [J]. Appl Phys Lett, 2001, 79: 284.
  • 2Hartnagel H L, Dawar A L, Jain A K,et al. Semiconducting Transparent Thin Films [M]. Bristol and Philadelphia; Institute of Physics Publishing, 1995.
  • 3Yong T Y,Tou T Y, Yow H K,et al. [J]. Thin Solid Films, 2008, 516: 4267-4271.
  • 4Haque S A, Koops S, Tokmoldin N,et al. [J]. Adv Mater, 2007, 19: 683.
  • 5Wantz G, Hirsh L, Huby N,et al. [J]. Thin Solid Films, 2005, 485: 247.
  • 6Savu R, Joanni E. [J]. Scr Mater, 2006, 55: 979.
  • 7Birnbaum M. [J]. J Appl Phys, 1965, 36: 3688.
  • 8Vorobyev A Y,Guo Chunlei. [J]. J Appl Phys, 2008, 104: 063523.
  • 9Chimmalgi, Grigoropoulos C P, Komvopoulos K. [J]. J Appl Phys, 2005, 97(10): 104319-104331.
  • 10Wang J, Guo C. L J J, Appl Phys Lett, 2005, 87: 251914.

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