期刊文献+

半导体激光器高反膜系参数的模拟仿真分析 被引量:1

A Simulation Study on the Design Parameters of High-Reflection Coating for Semiconductor Laser
下载PDF
导出
摘要 分析制备半导体激光器高反膜系中出现的中心波位置偏移和峰值偏移现象,利用TFCalc软件对实验参数进行模拟仿真,得到中心波位置和峰值与膜厚偏差、膜料折射率变化的具体关系.研究结果表明:膜厚变化只能影响中心波的偏移,而不能影响峰值的大小,膜厚增大则中心波红移,膜厚减小则中心波蓝移;折射率变化会影响中心波位置和峰值的大小两个值,但折射率偏差3%已经是较大值,故折射率偏差对中心波位置的影响不会太大. Problems of center wavelength position shift and peak reflectance variation appeared in high-reflection coating fabrication of semiconductor laser were analyzed and investigated in this paper. Experiment parameters were simulated by using TFCalc software, and the definite relationship between centre wavelength position, the peak reflectance and film thickness error, coating material index change was obtained. The simulation results showed that the film thickness errors influenced the wavelength position rather than the peak reflectance. Increasing film thickness causes the center wavelength red shift, while decreasing film thickness induced the center wavelength blue shift; Index modification of the coating ma- terials affects both the center position and the peak reflectance. Effect of center wavelength position from coating materi- als index modification in not significant even the index modification is as high as 3%.
出处 《华侨大学学报(自然科学版)》 CAS 北大核心 2013年第6期636-639,共4页 Journal of Huaqiao University(Natural Science)
基金 福建省自然科学基金资助项目(2012J0127) 华侨大学高层次引进人才科研启动项目(11Y0299)
关键词 半导体激光器 中心波 偏移 高反射膜 镀膜 semiconductor laser center wavelength shift high-reflection coating coating process
  • 相关文献

参考文献11

二级参考文献24

  • 1李林,钟景昌,苏伟,晏长岭,张永明,郝永琴,刘文莉,赵英杰.分布布喇格反射镜的反射特性[J].发光学报,2004,25(5):501-504. 被引量:3
  • 2范卫星,郝尧,卢玉村,陈建国.等离子体辅助镀膜[J].激光技术,1994,18(1):50-54. 被引量:2
  • 3吉玉玲,王卫乡.以二极管激光监测气相沉积[J].激光与光电子学进展,1997,34(5):26-28. 被引量:2
  • 4林永昌 卢维强.光学薄膜原理[M].北京:国防工业出版社,1989.323.
  • 5Martin P.Ionization-assisted evaporative processes:tech-niques and film properties. IEEE Trans Plasma Sci,1990,18(6):855.
  • 6Coleman J J,Beernink K J,Givens M E.Threshold current density in strained layer InxGa1-xAs-GaAs quantum-well heterostructure lasers.IEEE J Quantum Electron,1992,28(10):1983.
  • 7Shima Y,Chinone N,Ito R.Effects of facet coatings on the degradation characteristics of GaAs-GaAlAs DH lasers.Appl Phys Lett,1977,31(9):625.
  • 8Kappeler F,et al.Pulsed-power performance and stability of 800nm GaAlAs/GaAs oxide-stripe lasers.IEEE Proc,1982,129(6):256.
  • 9Tihanyi P,Scifres D R,Bauer R S.Reactive outdiffusion of contaminants from (AlGa)As laser facets.Appl Phys Lett,1983,42(4):313.
  • 10WEI D T.Ion beam interference coating for ultralow optical loss[J].Appl Opt,1989,28(14):2813-2816.

共引文献83

同被引文献7

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部